The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide

The n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated on cubic SiC (3C-SiC) epitaxial layers grown on 3C-SiC substrates. The gate oxide of the MOSFETs was formed using pyrogenic oxidation at 1100 C. The 3C-SiC MOSFETs showed enhancement type behaviors after annealing at 200 C for 30 min in Ar atmosphere. The maximum value of the effective channel mobility of the 3C-SiC MOSFETs was 260 cm2/V s. The leakage current of gate oxide was of a few tens of nA/cm2 at an electric field range below 8.5 MV/cm, and breakdown began around 8.5 MV/cm. 14 refs.