Preparation and characterization of highly (111)-oriented (Pb, La)(Zr, Ti)O3 thin films by sol-gel processing

Lanthanum modified lead zirconate titanate (Pb0.91La0.09)(Zr0.65Ti0.35)O3 (PLZT) ferroelectric thin films were grown on Pt/Ti/SiO2/Si(100) and fused quartz substrates using a sol-gel method with rapid thermal annealing processing. The results showed that the highly (111)-oriented pervoskite PLZT thin film growth on Pt/Ti/SiO2/Si(100) substrates. The electrical measurements were conducted on PLZT films in metal-ferroelectric-metal capacitor configuration. The PLZT thin films annealed at 600 C showed well-saturated hysteresis loops with remanent polarization and coercive electric field values were 10.3 mC/cm2 and 36 kV/cm, respectively, at an applied field of 300 kV /cm. At 100 kHz, the dielectric constant and dielectric loss of the film are 682 and 0.021, respectively. The PLZT thin film on fused quartz substrate, annealed at 600 C, exhibited good optical transmittance, the band gap of optical direct transitions is 3.89 eV. 21 refs.