High-Radiation Resistance of GaAs Solar Cell on Si Substrate Following 1 MeV Electron Irradiation

High-Radiation Resistance of GaAs Solar Cell on Si Substrate Following 1 MeV Electron Irradiation

The I-V characteristics of GaAs solar cells grown on GaAs and Si substrates after 1 MeV electron irradiation are compared under darkness and light illumination. The radiation resistance of the GaAs solar cell on the Si substrate is higher than that on the GaAs substrate. The high radiation tolerance...

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Veröffentlicht in:Japanese Journal of Applied Physics 2003-09, Vol.42 (Part 2, No.9A/B), p.L1054-L1056
Hauptverfasser: Soga, Tetsuo, Chandrasekaran, Nallathambi, Imaizumi, Mitsuru, Inuzuka, Yousuke, Taguchi, Hironori, Jimbo, Takashi, Matsuda, Sumio
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Sprache:eng
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Zusammenfassung:The I-V characteristics of GaAs solar cells grown on GaAs and Si substrates after 1 MeV electron irradiation are compared under darkness and light illumination. The radiation resistance of the GaAs solar cell on the Si substrate is higher than that on the GaAs substrate. The high radiation tolerance of the GaAs solar cell on the Si substrate is due to the slow generation rate of As vacancies compared with those of the GaAs solar cell on the GaAs substrate caused by electron irradiation. 11 refs.
ISSN:0021-4922
DOI:10.1143/JJAP.42.L1054