High-sensitivity GMR with low coercivity in top-IrMn spin-valves

Top-IrMn spin-valves with a structure of Ta/NiFe/CoFe/Cu/CoFe/IrMn/Ta have been investigated. The spin-valves were deposited by high vacuum DC magnetron sputtering at room temperature. The magnetoresistance ratio reaches 9.12% at room temperature. The coercivity of the free layer and the exchange bi...

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Veröffentlicht in:	Journal of magnetism and magnetic materials 2003-12, Vol.267 (3), p.386-390
Hauptverfasser:	Liu, H.R., Qu, B.J., Ren, T.L., Liu, L.T., Xie, H.L., Li, C.X., Ku, W.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Coercivity Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Giant magnetoresistance GMR Magnetic properties and materials Magnetotransport phenomena, materials for magnetotransport Metals. Metallurgy Physics Spin-valve
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Beschreibung
Zusammenfassung:	Top-IrMn spin-valves with a structure of Ta/NiFe/CoFe/Cu/CoFe/IrMn/Ta have been investigated. The spin-valves were deposited by high vacuum DC magnetron sputtering at room temperature. The magnetoresistance ratio reaches 9.12% at room temperature. The coercivity of the free layer and the exchange bias field is 1.04 and 180 Oe, respectively. The maximum sensitivity of the spin-valves is 8.36%/Oe. A reduction of 33.2% of the coercivity was obtained after a 2-min RIE process. Utilizing standard integrated circuit (IC) process, mass production of robust giant magnetoresistance sensors can be achieved with these spin-valve thin films.
ISSN:	0304-8853
DOI:	10.1016/S0304-8853(03)00407-4