Localized and resonant shallow donor states in GaAs/InGaAs double-quantum-well heterostructures

The spectrum, the wave functions of shallow donor states in double‐quantum‐well heterostructures, and the cross section of infrared radiation absorption at intracentre and impurity‐band transitions have been calculated. Calculations were performed by expanding the wave function in terms of the wave eigenfunctions of electron in a quantum well system unperturbed by the impurity potential. This method allows determining the energy levels of not only localized but also of resonant states in a continuous spectrum.