Ferroelectricity in layered bismuth oxide down to 1 nanometer

Atomic-scale ferroelectrics are of great interest for high-density electronics, particularly field-effect transistors, low-power logic, and nonvolatile memories. We devised a film with a layered structure of bismuth oxide that can stabilize the ferroelectric state down to 1 nanometer through samariu...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Science (American Association for the Advancement of Science) 2023-03, Vol.379 (6638), p.1218-1224
Hauptverfasser:	Yang, Qianqian, Hu, Jingcong, Fang, Yue-Wen, Jia, Yueyang, Yang, Rui, Deng, Shiqing, Lu, Yue, Dieguez, Oswaldo, Fan, Longlong, Zheng, Dongxing, Zhang, Xixiang, Dong, Yongqi, Luo, Zhenlin, Wang, Zhen, Wang, Huanhua, Sui, Manling, Xing, Xianran, Chen, Jun, Tian, Jianjun, Zhang, Linxing
Format:	Artikel
Sprache:	eng
Schlagworte:	Bismuth Bismuth oxides Ferroelectric materials Ferroelectricity Polarization Samarium Substrates Thickness Thin films
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!