Photoetching and modification of poly(tetrafluoroethylene-co-hexafluoropropylene) polymer surfaces with vacuum UV radiation
Films of poly(tetrafluoroethylene-co-hexafluoropropylene) (FEP) were exposed to radiation from 6.7 × 10 4 Pa He and Ar dc arc plasmas that were made to rotate inside of a graphite tube by the application of an auxiliary magnetic field. The films were covered with optical filters having different cut...
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Veröffentlicht in: | Polymer degradation and stability 2003-03, Vol.79 (3), p.399-404 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Films of poly(tetrafluoroethylene-co-hexafluoropropylene) (FEP) were exposed to radiation from 6.7 × 10
4 Pa He and Ar dc arc plasmas that were made to rotate inside of a graphite tube by the application of an auxiliary magnetic field. The films were covered with optical filters having different cut-off wavelengths to vary the vacuum ultraviolet (VUV) radiation that modified the fluoropolymer surface. With arc currents of 7 A and sample temperatures up to 110 °C, the photoetch rate of FEP was ca. 50% higher than for PTFE. Consistent with results for PTFE, treated FEP showed the following: (1) contact angles that started to decrease in the wavelength region between 173 and 160 nm and continued to decrease with shorter wavelengths; (2) surface roughening; (3) defluorination of the surface with a slight increase in the atomic%C and formation of C–C bonds in the top 3–5 nm of the surface as detected by XPS analysis; and (4) incorporation of oxygen, presumably from reaction with oxygen in air. |
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ISSN: | 0141-3910 1873-2321 |
DOI: | 10.1016/S0141-3910(02)00339-7 |