Growth and characterization of GaInNP grown on GaAs substrates

We report gas-source molecular beam epitaxy of Ga 1− x In x N y P 1− y grown on GaAs (1 0 0) substrates. Bulk Ga 1− x In x N y P 1− y samples were characterized by high-resolution X-ray rocking curve and photoluminescence (PL). With nitrogen incorporation, the PL peak red-shifts, indicating bandgap reduction. The PL peak energy exhibits an inverted S-shape dependence with temperature, and the low-temperature PL spectra exhibit an asymmetric line shape with a low-energy tail. Both indicate the presence of localized states which dominate the radiative recombination processes at low temperature. Rapid thermal annealing at 700°C for 10 s in a 100% N 2 ambient improves the Ga 0.44In 0.56N 0.01P 0.99 PL intensity by a factor of 10, reduces the line width to two-fifth, and removes the localized states.