Growth of Bulk GaN Single Crystals Using Li-Na Mixed Flux System

Growth of Bulk GaN Single Crystals Using Li-Na Mixed Flux System

Authors found the yield of GaN grown in a Li-Na flux system to be much higher than that grown in Na flux. N dissolution seemed to increase with Li in solution, which promotes the growth of GaN crystals. Authors report that the yield of GaN and habit modifications greatly depend on the composition of...

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Veröffentlicht in:Japanese Journal of Applied Physics 2003-06, Vol.42 (Part 2, No. 6A), p.L565-L567
Hauptverfasser: Morishita, Masanori, Kawamura, Fumio, Iwahashi, Tomoya, Yoshimura, Masashi, Mori, Yusuke, Sasaki, Takatomo
Format: Artikel
Sprache:eng
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Zusammenfassung:Authors found the yield of GaN grown in a Li-Na flux system to be much higher than that grown in Na flux. N dissolution seemed to increase with Li in solution, which promotes the growth of GaN crystals. Authors report that the yield of GaN and habit modifications greatly depend on the composition of the Li-Na flux system and that GaN can be grown in a pure Li flux at about 50 atm. 11 refs.
ISSN:0021-4922
DOI:10.1143/JJAP.42.L565