Integration of SiOC air gaps in copper interconnects

Integration of SiOC air gaps in copper interconnects

The formation of air gaps by means of a non-conformal chemical vapor deposition (CVD) on patterned wafers was successfully demonstrated using SiOC ( K=2.9) as inter-level metal dielectric. This paper presents the results on physical characterization and electrical performance evaluation of integrate...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Microelectronic engineering 2003-11, Vol.70 (2), p.274-279
Hauptverfasser: Gosset, L.G, Arnal, V, Brun, Ph, Broekaart, M, Monget, C, Casanova, N, Rivoire, M, Oberlin, J.-C, Torres, J
Format: Artikel
Sprache:eng
Schlagworte:
Air gap
Applied sciences
Copper interconnect
Design. Technologies. Operation analysis. Testing
Dual damascene architecture
Electronics
Exact sciences and technology
Integrated circuits
Microelectronic fabrication (materials and surfaces technology)
PECVD dielectrics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Ultra-low K
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The formation of air gaps by means of a non-conformal chemical vapor deposition (CVD) on patterned wafers was successfully demonstrated using SiOC ( K=2.9) as inter-level metal dielectric. This paper presents the results on physical characterization and electrical performance evaluation of integrated SiOC air gaps in a three-metal level Cu/SiOC interconnect module. The influence of the air gaps shape on parasitic coupling capacitance between copper lines was also discussed in accordance with mask design rules and processing steps.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(03)00438-6