Nanoscale Ultraviolet-Light-Emitting Diodes Using Wide-Bandgap Gallium Nitride Nanorods

Nanoscale Ultraviolet-Light-Emitting Diodes Using Wide-Bandgap Gallium Nitride Nanorods

The fabrication of p–n junctions in individual GaN nanorods has been realized using hydride vapor phase epitaxy. Application of the resulting heterostructures as wide bandgap current rectifiers with a high breakdown voltage and for near UV light‐emitting diodes is demonstrated. The Figure is a lumin...

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Veröffentlicht in:Advanced materials (Weinheim) 2003-04, Vol.15 (7-8), p.567-569
Hauptverfasser: Kim, H.-M., Kang, T.W., Chung, K.S.
Format: Artikel
Sprache:eng
Schlagworte:
Epitaxial growth
Gallium nitride
inorganic
Light-emitting diodes
Light‐emitting diodes, inorganic
Nanorods
Nanorods, semiconductor
p-n junctions
semiconductor
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Zusammenfassung:The fabrication of p–n junctions in individual GaN nanorods has been realized using hydride vapor phase epitaxy. Application of the resulting heterostructures as wide bandgap current rectifiers with a high breakdown voltage and for near UV light‐emitting diodes is demonstrated. The Figure is a luminescence image of the light emitted from a forward‐biased nanorod p–n junction at 3 V.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200304554