HgCdTe on Si: Present status and novel buffer layer concepts

Authors discuss buffer-layer concepts for the synthesis of low defect-density HgCdTe epilayers on Si for both hybrid and monolithically integrated, ir focal plane arrays (IRFPAa). The primary technical problems to overcome include the 19% lattice-parameter mismatch between HgCdTe and Si, and the (211)B surface orientation required for MBE, the growth technique of choice for HgCdTe. Authors provide a general overview of IRFPAs, motivations for realizing HgCdTe on Si, the current state-of-the-art parameters as a baseline, and three novel buffer-layer concepts and technologies based on (1) obedient GeSi films on SiO2, (2) wafer bonding, and (3) chalcogenides. 28 refs.