Growth of Faceted Free-Spreading SiC Bulk Crystals by Sublimation
We report on a new method of free-spreading SiC bulk crystal growth by sublimation, where the crystal is kept out of touch with the crucible side wall and SiC polycrystalline deposits. The free-spreading SiC tends to form a crystal of pronounced hexagonal shape during the growth. The 6H- and 4H-SiC...
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| Veröffentlicht in: | Materials science forum 2003-09, Vol.433-436, p.29-32 |
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| container_title | Materials science forum |
| container_volume | 433-436 |
| creator | Roenkov, A.D. Karpov, S.Yu Ramm, M.S. Mokhov, E.N. Vodakov, Yu.A. Helava, Heikki Ramm, M.G. Makarov, Yu.A. |
| description | We report on a new method of free-spreading SiC bulk crystal growth by sublimation, where the crystal is kept out of touch with the crucible side wall and SiC polycrystalline deposits. The free-spreading SiC tends to form a crystal of pronounced hexagonal shape during the growth. The 6H- and 4H-SiC crystals up to 35 mm in diameter with the quality comparable or better than that of the Lely crystals are obtained. The growth conditions favorable for the free-spreading crystal growth are discussed. Different efficiencies of donor (N) and acceptor (Al) incorporation are observed on singular facets. |
| doi_str_mv | 10.4028/www.scientific.net/MSF.433-436.29 |
| format | Article |
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| title | Growth of Faceted Free-Spreading SiC Bulk Crystals by Sublimation |
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