Growth of Faceted Free-Spreading SiC Bulk Crystals by Sublimation

We report on a new method of free-spreading SiC bulk crystal growth by sublimation, where the crystal is kept out of touch with the crucible side wall and SiC polycrystalline deposits. The free-spreading SiC tends to form a crystal of pronounced hexagonal shape during the growth. The 6H- and 4H-SiC...

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Veröffentlicht in:Materials science forum 2003-09, Vol.433-436, p.29-32
Hauptverfasser: Roenkov, A.D., Karpov, S.Yu, Ramm, M.S., Mokhov, E.N., Vodakov, Yu.A., Helava, Heikki, Ramm, M.G., Makarov, Yu.A.
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Sprache:eng
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Zusammenfassung:We report on a new method of free-spreading SiC bulk crystal growth by sublimation, where the crystal is kept out of touch with the crucible side wall and SiC polycrystalline deposits. The free-spreading SiC tends to form a crystal of pronounced hexagonal shape during the growth. The 6H- and 4H-SiC crystals up to 35 mm in diameter with the quality comparable or better than that of the Lely crystals are obtained. The growth conditions favorable for the free-spreading crystal growth are discussed. Different efficiencies of donor (N) and acceptor (Al) incorporation are observed on singular facets.
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.433-436.29