Growth of Faceted Free-Spreading SiC Bulk Crystals by Sublimation
We report on a new method of free-spreading SiC bulk crystal growth by sublimation, where the crystal is kept out of touch with the crucible side wall and SiC polycrystalline deposits. The free-spreading SiC tends to form a crystal of pronounced hexagonal shape during the growth. The 6H- and 4H-SiC...
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Veröffentlicht in: | Materials science forum 2003-09, Vol.433-436, p.29-32 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | We report on a new method of free-spreading SiC bulk crystal growth by sublimation, where the crystal is kept out of touch with the crucible side wall and SiC polycrystalline deposits. The free-spreading SiC tends to form a crystal of pronounced hexagonal shape during the growth. The 6H- and 4H-SiC crystals up to 35 mm in diameter with the quality comparable or better than that of the Lely crystals are obtained. The growth conditions favorable for the free-spreading crystal growth are discussed. Different efficiencies of donor (N) and acceptor (Al) incorporation are observed on singular facets. |
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ISSN: | 0255-5476 1662-9752 1662-9752 |
DOI: | 10.4028/www.scientific.net/MSF.433-436.29 |