A Genuine Quarter-Filled Band Mott Insulator, (EDT-TTF-CONMe2)2AsF6: Where the Chemistry and Physics of Weak Intermolecular Interactions Act in Unison

C1 symmetry and C sp 2–H···O and C sp 3–H···O hydrogen‐bond donor/acceptor ability of the title phase π‐donor are expressed by a glide plane (a ± c/2 repetition), uniform stacks, and a band structure quarter‐filled with holes. Conductivity and spin susceptibility data demonstrate strong Mott localiz...

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Veröffentlicht in:	Advanced materials (Weinheim) 2003-08, Vol.15 (15), p.1251-1254
Hauptverfasser:	Heuzé, K., Fourmigué, M., Batail, P., Coulon, C., Clérac, R., Canadell, E., Auban-Senzier, P., Ravy, S., Jérome, D.
Format:	Artikel
Sprache:	eng
Schlagworte:	Conducting materials Crystal engineering Solid-state materials
Online-Zugang:	Volltext
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