A Genuine Quarter-Filled Band Mott Insulator, (EDT-TTF-CONMe2)2AsF6: Where the Chemistry and Physics of Weak Intermolecular Interactions Act in Unison

A Genuine Quarter-Filled Band Mott Insulator, (EDT-TTF-CONMe2)2AsF6: Where the Chemistry and Physics of Weak Intermolecular Interactions Act in Unison

C1 symmetry and C sp 2–H···O and C sp 3–H···O hydrogen‐bond donor/acceptor ability of the title phase π‐donor are expressed by a glide plane (a ± c/2 repetition), uniform stacks, and a band structure quarter‐filled with holes. Conductivity and spin susceptibility data demonstrate strong Mott localiz...

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Veröffentlicht in:Advanced materials (Weinheim) 2003-08, Vol.15 (15), p.1251-1254
Hauptverfasser: Heuzé, K., Fourmigué, M., Batail, P., Coulon, C., Clérac, R., Canadell, E., Auban-Senzier, P., Ravy, S., Jérome, D.
Format: Artikel
Sprache:eng
Schlagworte:
Conducting materials
Crystal engineering
Solid-state materials
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Zusammenfassung:C1 symmetry and C sp 2–H···O and C sp 3–H···O hydrogen‐bond donor/acceptor ability of the title phase π‐donor are expressed by a glide plane (a ± c/2 repetition), uniform stacks, and a band structure quarter‐filled with holes. Conductivity and spin susceptibility data demonstrate strong Mott localization at ambient pressure which is weakened at high pressure. These results show that the 1/4‐Umklapp scattering channel is efficient enough for localization in 1D, strongly correlated electron systems.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200305247