Glass-modified stress waves for adhesion measurement of ultra thin films for device applications
Laser-generated stress wave profiles with rarefaction shocks (almost zero post-peak decay times) have been uncovered in different types of glasses and presented in this communication. The rise time of the pulses was found to increase with their amplitude, with values reaching as high as 50 ns . This...
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Veröffentlicht in: | Journal of the mechanics and physics of solids 2003-08, Vol.51 (8), p.1395-1412 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Laser-generated stress wave profiles with rarefaction shocks (almost zero post-peak decay times) have been uncovered in different types of glasses and presented in this communication. The rise time of the pulses was found to increase with their amplitude, with values reaching as high as
50
ns
. This is in contrast to measurements in other brittle crystalline solids where pulses with rise times of
1
–2
ns
and post-peak decay times of
16
–20
ns
were recorded. The formation of rarefaction shock is attributed to the increased compressibility of glasses with increasing pressures. This was demonstrated using a one-dimensional nonlinear elastic wave propagation model in which the wave speed was taken as a function of particle velocity. The technological importance of these pulses in measuring the tensile strength of very thin film interfaces is demonstrated by using a previously developed laser spallation experiment in which a laser-generated compressive stress pulse in the substrate reflects into a tensile wave from the free surface of the film and pries off its interface at a threshold amplitude. Because of the rarefaction shock, glass-modified waves allow generation of substantially higher interfacial tensile stress amplitudes compared with those with finite post-peak decay profiles. Thus, for the first time, tensile strengths of very strong and ultra thin film interfaces can be measured. Results presented here indicate that interfaces of 185-nm-thick films, and with strengths as high as
2.7
GPa
, can be measured. Thus, an important advance has been made that should allow material optimization of ultra thin layer systems that may form the basis of future MEMS-based microelectronic, mechanical and clinical devices. |
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ISSN: | 0022-5096 |
DOI: | 10.1016/S0022-5096(03)00057-7 |