Analysis of Unipolar and Bipolar Cascoded Switches with MOS Gate
The 3.3 kV unipolar and 10 kV bipolar integral cascode switches, built upon the principle of a buried grid and a low voltage control MOSFET, are compared to the plain 3.3 kV UMOSFET and BGJFET and 10kV TIGBT (Trench IGBT) and BGJFETh (Buried Grid Junction Field Effect Transistor (T) or Thyristor (Th...
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| Veröffentlicht in: | Materials science forum 2003-09, Vol.433-436, p.801-804 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | The 3.3 kV unipolar and 10 kV bipolar integral cascode switches, built upon the principle of a buried grid and a low voltage control MOSFET, are compared to the plain 3.3 kV UMOSFET and BGJFET and 10kV TIGBT (Trench IGBT) and BGJFETh (Buried Grid Junction Field Effect Transistor (T) or Thyristor (Th)), in order to analyze and demonstrate advantages of the cascode concept. |
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| ISSN: | 0255-5476 1662-9752 1662-9752 |
| DOI: | 10.4028/www.scientific.net/MSF.433-436.801 |