Effect of potential and doping profiles on excitation of stimulated THz emission of SiGe/Si quantum-well structures

Effect of potential and doping profiles on excitation of stimulated THz emission of SiGe/Si quantum-well structures

Studies of stimulated THz emission from boron-doped Si/Si1−xGex/n-Si quantum-well (QW) structures of various potential and doping profiles are presented. In the single-QW structures with the optical resonator, the stimulated THz emission is observed only for Ge content x=0.07, 0.1, and 0.15. Two dif...

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Veröffentlicht in:Physica. B, Condensed matter Condensed matter, 2003-12, Vol.340-342, p.831-834
Hauptverfasser: Altukhov, I.V., Chirkova, E.G., Sinis, V.P., Kagan, M.S., Troeger, R.T., Ray, S.K., Kolodzey, J., Prokofiev, A.A., Odnoblyudov, M.A., Yassievich, I.N.
Format: Artikel
Sprache:eng
Schlagworte:
SiGe quantum wells
Stimulated THz emission
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Zusammenfassung:Studies of stimulated THz emission from boron-doped Si/Si1−xGex/n-Si quantum-well (QW) structures of various potential and doping profiles are presented. In the single-QW structures with the optical resonator, the stimulated THz emission is observed only for Ge content x=0.07, 0.1, and 0.15. Two different regimes for excitation of the emission are observed in the same sample depending on charging the surface and thermal ionization of donors in the substrate.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2003.09.219