Improvement of cubic GaN film crystal quality by use of an AlN/GaN ordered alloy on GaAs (1 0 0) by plasma assisted molecular beam epitaxy

We demonstrate cubic GaN film growth using a newly developed AlN/GaN ordered alloy grown on GaAs (1 0 0) by plasma assisted molecular beam epitaxy. A significant improvement in crystal quality was achieved by reducing the nitridation time in the initial growth stage of the III-nitride layer. Epitaxi...

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Veröffentlicht in:	Journal of crystal growth 2003-04, Vol.251 (1), p.455-459
Hauptverfasser:	Kimura, Ryuhei, Shigemori, Atsushi, Shike, Junichi, Ishida, Koichi, Takahashi, Kiyoshi
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Crystal structure A1. Reflection high energy electron diffraction A1. X-ray diffraction A3. Molecular beam epitaxy B1. Nitrides B2. Semiconducting III–V materials Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Physics
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Zusammenfassung:	We demonstrate cubic GaN film growth using a newly developed AlN/GaN ordered alloy grown on GaAs (1 0 0) by plasma assisted molecular beam epitaxy. A significant improvement in crystal quality was achieved by reducing the nitridation time in the initial growth stage of the III-nitride layer. Epitaxial cubic GaN films with high phase purity were successfully grown. Film crystallographic qualities were investigated by RHEED, XRD, AFM, PL and TEM observations.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/S0022-0248(02)02284-4