Effect of substrate bias voltage under growth on characteristics of InN films grown by molecular-beam epitaxy assisted by electron cyclotron resonance plasma

We grew InN films on Si(111) substrates, to which a biased electric filed was applied positively or negatively, by electron cyclotron resonance plasma‐assisted molecular‐beam epitaxy (ECR plasma‐assisted MBE) in order to suppress ion damage due to N2+ ions or/and impurity incorporation due to some ions of residual impurities generated by ECR plasma and have investigated the effects of bias voltage on film characteristics. The surface morphology was improved, the carrier concentration decreased, and the Hall mobility increased with increase of the bias voltage probably because of the two reduction effects of impurity incorporation and ion damage due to N2+ ions generated by ECR plasma. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)