Influence of a high electric field on the photoluminescence from silicon nanocrystals in SiO2

The influence of the application of a high electric field on the radiative recombination of an electron-hole pair in a silicon nanocrystal in SiO2 has been investigated experimentally by examining the photoluminescence emission under the influence of the field. It was found that the PL signal was fi...

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Veröffentlicht in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2003-08, Vol.101 (1-3), p.324-328
Hauptverfasser: Ioannou-Sougleridis, V., Kamenev, B., Kouvatsos, D.N., Nassiopoulou, A.G.
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Sprache:eng
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Zusammenfassung:The influence of the application of a high electric field on the radiative recombination of an electron-hole pair in a silicon nanocrystal in SiO2 has been investigated experimentally by examining the photoluminescence emission under the influence of the field. It was found that the PL signal was first slightly red-shifted at relatively low-fields and it was then blue-shifted at higher fields. PL degradation was also observed which was partially restored after removal of the electric field. This behavior has been attributed to the quantum-confined Stark effect, combined with Auger quenching and charge escape from the nanocrystals.
ISSN:0921-5107
DOI:10.1016/S0921-5107(02)00733-X