Influence of a high electric field on the photoluminescence from silicon nanocrystals in SiO2
The influence of the application of a high electric field on the radiative recombination of an electron-hole pair in a silicon nanocrystal in SiO2 has been investigated experimentally by examining the photoluminescence emission under the influence of the field. It was found that the PL signal was fi...
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Veröffentlicht in: | Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2003-08, Vol.101 (1-3), p.324-328 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The influence of the application of a high electric field on the radiative recombination of an electron-hole pair in a silicon nanocrystal in SiO2 has been investigated experimentally by examining the photoluminescence emission under the influence of the field. It was found that the PL signal was first slightly red-shifted at relatively low-fields and it was then blue-shifted at higher fields. PL degradation was also observed which was partially restored after removal of the electric field. This behavior has been attributed to the quantum-confined Stark effect, combined with Auger quenching and charge escape from the nanocrystals. |
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ISSN: | 0921-5107 |
DOI: | 10.1016/S0921-5107(02)00733-X |