Measuring CTE uniformity in ULE glass

The recently revised Intel (Austin, TX) roadmap for leading-edge edge lithographic feature sizes identifies extreme-ultraviolet (EUV) lithography as the primary candidate to replace argon fluoride excimer-laser-based lithography at the 32-nm node in 2009. This new technology will use an all-reflective lithographic tool including, for the first time ever, a reflective photo-mask (reticle). Operating at a wavelength of 13.4 nm, EUV lithography will challenge lithography designers and materials scientists with exacting thermal-management and dimensional-stability requirements.