Fabrication of a GaAs Emitter with a High Aspect Ratio for Generation of Prebunched Electron Beam Using Gunn Effect
A prebunched electron beam at microwave and millimeter wave frequencies is expected to be generated directly from a field emission cathode by applying the Gunn effect in a compound semiconductor to the cathode. Authors describe the fabrication of a vertical GaAs field emitter with a high aspect rati...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2003, Vol.42 (Part 1, No. 6B), p.4051-4053 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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