Fabrication of a GaAs Emitter with a High Aspect Ratio for Generation of Prebunched Electron Beam Using Gunn Effect

A prebunched electron beam at microwave and millimeter wave frequencies is expected to be generated directly from a field emission cathode by applying the Gunn effect in a compound semiconductor to the cathode. Authors describe the fabrication of a vertical GaAs field emitter with a high aspect rati...

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Veröffentlicht in:Japanese Journal of Applied Physics 2003, Vol.42 (Part 1, No. 6B), p.4051-4053
Hauptverfasser: Hasegawa, Hideaki, Mimura, Hidenori, Yokoo, Kuniyoshi
Format: Artikel
Sprache:eng
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Zusammenfassung:A prebunched electron beam at microwave and millimeter wave frequencies is expected to be generated directly from a field emission cathode by applying the Gunn effect in a compound semiconductor to the cathode. Authors describe the fabrication of a vertical GaAs field emitter with a high aspect ratio by combining wet and dry etching of the GaAs wafer designed for the Gunn effect. The field emission characteristics of the emitter are also described, suggesting the generation of a prebunched beam. 6 refs.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.42.4051