Magnetic resonance investigation on P-doped 6H-SiC

In this paper, we discuss the many interpretations of electron paramagnetic resonance (EPR) results obtained in nuclear transmutation P-doped 6H-SiC. At least six different P-related donor defects have been observed. Among these defects only two can be unambiguously attributed to the shallow P donor on both quasi-cubic sites. The others are still controversial. We present preliminary results of a high-frequency photoluminescence-detected magnetic resonance investigation on a P-doped 6H-SiC in which the doping has been carried out in situ during the PVT growth. Along with Al, B and N, two new defects were observed with lines at g=2.010 and 2.009 for B∥c. They have been observed previously and were associated with P-defects identified with conventional EPR at 9GHz.