Fabrication of vanadium oxide thin film with high-temperature coefficient of resistance using V2O5/V/V2O5 multi-layers for uncooled microbolometers

Authors present a novel fabrication method for vanadium oxide thin films having good electrical properties. Through the formation of a sandwich structure of V2O5 (100 angstroms)/V (80 angstroms)/V2O5 (500 angstroms) by a conventional sputter method and post-annealing at 300 C in oxygen, a mixed phas...

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Veröffentlicht in:Thin solid films 2003-02, Vol.425 (1-2), p.260-264
Hauptverfasser: HAN, Yong-Hee, CHOI, In-Hoon, KANG, Ho-Kwan, PARK, Jong-Yeon, KIM, Kun-Tae, SHIN, Hyun-Joon, SUNG MOON
Format: Artikel
Sprache:eng
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Zusammenfassung:Authors present a novel fabrication method for vanadium oxide thin films having good electrical properties. Through the formation of a sandwich structure of V2O5 (100 angstroms)/V (80 angstroms)/V2O5 (500 angstroms) by a conventional sputter method and post-annealing at 300 C in oxygen, a mixed phase of VOx is formed. The results show that the mixed phase formed by this process has a high TCR of more than -2%/C and low resistivity of < 0.1 OHM cm at room temperature. 12 refs.
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(02)01263-4