Fabrication of vanadium oxide thin film with high-temperature coefficient of resistance using V2O5/V/V2O5 multi-layers for uncooled microbolometers
Authors present a novel fabrication method for vanadium oxide thin films having good electrical properties. Through the formation of a sandwich structure of V2O5 (100 angstroms)/V (80 angstroms)/V2O5 (500 angstroms) by a conventional sputter method and post-annealing at 300 C in oxygen, a mixed phas...
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Veröffentlicht in: | Thin solid films 2003-02, Vol.425 (1-2), p.260-264 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | Authors present a novel fabrication method for vanadium oxide thin films having good electrical properties. Through the formation of a sandwich structure of V2O5 (100 angstroms)/V (80 angstroms)/V2O5 (500 angstroms) by a conventional sputter method and post-annealing at 300 C in oxygen, a mixed phase of VOx is formed. The results show that the mixed phase formed by this process has a high TCR of more than -2%/C and low resistivity of < 0.1 OHM cm at room temperature. 12 refs. |
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ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/S0040-6090(02)01263-4 |