MULTIPLE-QUANTUM-WIRE STRUCTURES WITH GOOD SIZE UNIFORMITY FABRICATED BY CH4/H2 DRY ETCHING AND ORGANOMETALLIC VAPOR-PHASE-EPITAXIAL REGROWTH

GaInAsP/InP multiple-quantum-wire structures with wire widths of 18 and 27 nm in the period of 80 nm were fabricated by electron beam lithography, CH4/H2-reactive ion etching and OMVPE regrowth. Size distributions of these quantum-wire structures were measured by SEM and the standard deviation was obtained to be less than plus/minus 2 nm. From EL spectra at 103 K, the FWHM of these quantum-wire structures was comparable to that of the quantum-film structure fabricated from the same initial wafer. 11 refs.