Determination of the nature of principal scattering mechanism in well-annealed vacuum deposited thin films of the ternary thermoelectric material Bi2(Te0.8Se0.2)3

Resistivity and thermopower measurements were performed on thin films of Bi2(Te0.8Se0.2)3 prepared by flash evaporation technique. Applying the Jain-Verma theory to the experimental data of Bi2(Te0.8Se0.2)3, scattering index parameter was evaluated. The value of scattering index parameter was found...

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Veröffentlicht in:	Thin solid films 2003-01, Vol.424 (1), p.75-78
Hauptverfasser:	DAMODARA DAS, V, RAMESH CHANDRA MALLIK
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Physics Thermoelectric effects
Online-Zugang:	Volltext
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Zusammenfassung:	Resistivity and thermopower measurements were performed on thin films of Bi2(Te0.8Se0.2)3 prepared by flash evaporation technique. Applying the Jain-Verma theory to the experimental data of Bi2(Te0.8Se0.2)3, scattering index parameter was evaluated. The value of scattering index parameter was found to lie between -0.3 and -0.2. This indicates the presence of other scattering mechanisms, in addition to the lattice scattering. 16 refs.
ISSN:	0040-6090
DOI:	10.1016/S0040-6090(02)00919-7