Magneto-photoluminescence studies of the influence of substrate orientation on the growth of InAs/GaAs quantum dots

We have investigated the formation of InAs quantum dots grown by molecular beam epitaxy on GaAs substrates with different orientations using photoluminescence spectroscopy in pulsed magnetic fields (

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Bibliographische Detailangaben
Veröffentlicht in:	Journal of crystal growth 2003-04, Vol.251 (1), p.186-191
Hauptverfasser:	Maes, J., Henini, M., Hayne, M., Patanè, A., Pulizzi, F., Eaves, L., Main, P.C., Moshchalkov, V.V.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Magnetic fields A1. Nanostructures A1. Photoluminescence A3. Molecular beam epitaxy A3. Quantum dots B2. Semiconducting III–V materials Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Nanoscale materials and structures: fabrication and characterization Physics
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Beschreibung
Zusammenfassung:	We have investigated the formation of InAs quantum dots grown by molecular beam epitaxy on GaAs substrates with different orientations using photoluminescence spectroscopy in pulsed magnetic fields (
ISSN:	0022-0248 1873-5002
DOI:	10.1016/S0022-0248(02)02382-5