LOW TEMPERATURE GROWTH OF EPITAXIAL La0.8Sr0.2MnO3 THIN FILMS BY AN EXCIMER-LASER-ASSISTED COATING PYROLYSIS PROCESS

The preparation of La0.8Sr0.2MnO3 (LSMO) films on a LaAlO3 (LAO) substrate has been investigated by an excimer-laser-assisted coating pyrolysis process (ELACPP) in the temperature range from 350 to 500 C. (00l) oriented LSMO films were obtained by ArF laser irradiation at 100 mJ/cm2 in the substrate...

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Veröffentlicht in:Jpn.J.Appl.Phys ,Part 2. Vol. 42, no. 8A, pp. L956-L959. 2003 Part 2. Vol. 42, no. 8A, pp. L956-L959. 2003, 2003-08, Vol.42 (8A), p.L956-L959
Hauptverfasser: Tsuchiya, T, Yoshitake, T, Shimakawa, Y, Yamaguchi, I, Manabe, T, Kumagai, T, Kubo, Y
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Sprache:eng
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Zusammenfassung:The preparation of La0.8Sr0.2MnO3 (LSMO) films on a LaAlO3 (LAO) substrate has been investigated by an excimer-laser-assisted coating pyrolysis process (ELACPP) in the temperature range from 350 to 500 C. (00l) oriented LSMO films were obtained by ArF laser irradiation at 100 mJ/cm2 in the substrate temperature range from 400 to 500 C. The films prepared at 500 C on the LAO substrate were epitaxially grown based on XRD pole-figure measurements. The temperature dependence of the resistance of the LSMO film prepared at 400 C showed a semiconducting behavior. On the other hand, that prepared at 500 C showed a metallic behavior from 310 to 100 K and the absolute magnitude of the resistivity of the film at 300 K was 2.6 x 10-2 OHM cm. 18 refs.
ISSN:0021-4922
DOI:10.1143/jjap.42.L956