LOW-TEMPERATURE DRY ETCHING OF InP BY INDUCTIVELY COUPLED PLASMA USING HI/Cl2

LOW-TEMPERATURE DRY ETCHING OF InP BY INDUCTIVELY COUPLED PLASMA USING HI/Cl2

Authors have demonstrated vertical and smooth inductively coupled plasma (ICP) dry etching of InP using HI/Cl2 gasses at a low process temperature of 90 C. Authors measured the etching rate by varying bias power. A small flow rate of HI was required to obtain vertical profiles. Authors consider that...

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Veröffentlicht in:Jpn.J.Appl.Phys ,Part 2. Vol. 42, no. 12A, pp. L1414-L1415. 2003 Part 2. Vol. 42, no. 12A, pp. L1414-L1415. 2003, 2003-01, Vol.42 (12A), p.L1414-L1415
Hauptverfasser: Matsutani, A, Ohtsuki, H, Koyama, F
Format: Artikel
Sprache:eng
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Zusammenfassung:Authors have demonstrated vertical and smooth inductively coupled plasma (ICP) dry etching of InP using HI/Cl2 gasses at a low process temperature of 90 C. Authors measured the etching rate by varying bias power. A small flow rate of HI was required to obtain vertical profiles. Authors consider that HI/Cl2-ICP etching is useful in InP-based device fabrication with a resist mask. 5 refs.
ISSN:0021-4922
DOI:10.1143/JJAP.42.L1414