DLTS of low-energy hydrogen ion implanted n-Si

We have used deep level transient spectroscopy and capacitance–voltage measurements to study the influence of low-energy hydrogen ion implantation on the creation of defects in n-Si. In particular, we have studied the ion fluence dependence of the free carrier compensation at room temperature, and we have measured the generation of VO–H complex and VP-pair in ion implanted samples. The 7.5keV H ions created defects in the top 0.3μm of samples, which resulted in carrier compensation to depths exceeding 1μm. This effect is not due to defects created by ion channeling but is rather due to the migration of defects as demonstrated using binary collision code MARLOWE.