Electronic structures of CeRhAs and CeRhSb
We have performed first-principles band structure calculations of ε-TiNiSi type CeRhAs and CeRhSb. Results of the calculations predict that the ground state of CeRhAs is insulating with an indirect band gap of 38 meV . On the other hand, the ground state of CeRhSb is semimetallic with anisotropic ho...
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| Veröffentlicht in: | Physica. B, Condensed matter Condensed matter, 2003-04, Vol.328 (1), p.154-156 |
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| container_title | Physica. B, Condensed matter |
| container_volume | 328 |
| creator | Ishii, F. |
| description | We have performed first-principles band structure calculations of
ε-TiNiSi type CeRhAs and CeRhSb. Results of the calculations predict that the ground state of CeRhAs is insulating with an indirect band gap of
38
meV
. On the other hand, the ground state of CeRhSb is semimetallic with anisotropic hole and electron pockets. Band structures near the Fermi energy and the origin of the band gap are discussed in detail. |
| doi_str_mv | 10.1016/S0921-4526(02)01834-3 |
| format | Article |
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ε-TiNiSi type CeRhAs and CeRhSb. Results of the calculations predict that the ground state of CeRhAs is insulating with an indirect band gap of
38
meV
. On the other hand, the ground state of CeRhSb is semimetallic with anisotropic hole and electron pockets. Band structures near the Fermi energy and the origin of the band gap are discussed in detail.</description><identifier>ISSN: 0921-4526</identifier><identifier>EISSN: 1873-2135</identifier><identifier>DOI: 10.1016/S0921-4526(02)01834-3</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electron density of states and band structure of crystalline solids ; Electron states ; Electronic structure ; Exact sciences and technology ; FLAPW method ; Intermetallic compounds ; Kondo semiconductor ; Physics ; Plane-wave methods (including augmented plane-wave method) ; Theories and models of many electron systems</subject><ispartof>Physica. B, Condensed matter, 2003-04, Vol.328 (1), p.154-156</ispartof><rights>2002 Elsevier Science B.V.</rights><rights>2004 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c368t-1cabcd5a2855c184bc76f4c34c5d8714f1613c9c17b991f310de7fb7c986a4bf3</citedby><cites>FETCH-LOGICAL-c368t-1cabcd5a2855c184bc76f4c34c5d8714f1613c9c17b991f310de7fb7c986a4bf3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/S0921-4526(02)01834-3$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,3536,23910,23911,25119,27903,27904,45974</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=15366566$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Ishii, F.</creatorcontrib><title>Electronic structures of CeRhAs and CeRhSb</title><title>Physica. B, Condensed matter</title><description>We have performed first-principles band structure calculations of
ε-TiNiSi type CeRhAs and CeRhSb. Results of the calculations predict that the ground state of CeRhAs is insulating with an indirect band gap of
38
meV
. On the other hand, the ground state of CeRhSb is semimetallic with anisotropic hole and electron pockets. Band structures near the Fermi energy and the origin of the band gap are discussed in detail.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electron density of states and band structure of crystalline solids</subject><subject>Electron states</subject><subject>Electronic structure</subject><subject>Exact sciences and technology</subject><subject>FLAPW method</subject><subject>Intermetallic compounds</subject><subject>Kondo semiconductor</subject><subject>Physics</subject><subject>Plane-wave methods (including augmented plane-wave method)</subject><subject>Theories and models of many electron systems</subject><issn>0921-4526</issn><issn>1873-2135</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNqFkEtLxEAQhAdRcF39CcJeFBWi05lnTrIs6wMWBFfPw6QzgyPZRGcSwX9v9oEe7Uv34asuqgg5BXoNFOTNkhY5ZFzk8oLmlxQ04xnbIyPQimU5MLFPRr_IITlK6Z0OAwpG5GpeO-xi2wScpC722PXRpUnrJzP3_DZNE9tUm3NZHpMDb-vkTnZ7TF7v5i-zh2zxdP84my4yZFJ3GaAtsRI210IgaF6ikp4j4ygqrYB7kMCwQFBlUYBnQCunfKmw0NLy0rMxOd_-_YjtZ-9SZ1Yhoatr27i2TyZXOuec8gEUWxBjm1J03nzEsLLx2wA162bMphmzjm1objbNGDboznYGNqGtfbQNhvQnFkxKIeXA3W45N6T9Ci6ahME16KoQh9JM1YZ_nH4Aa1l1-g</recordid><startdate>20030401</startdate><enddate>20030401</enddate><creator>Ishii, F.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20030401</creationdate><title>Electronic structures of CeRhAs and CeRhSb</title><author>Ishii, F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c368t-1cabcd5a2855c184bc76f4c34c5d8714f1613c9c17b991f310de7fb7c986a4bf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electron density of states and band structure of crystalline solids</topic><topic>Electron states</topic><topic>Electronic structure</topic><topic>Exact sciences and technology</topic><topic>FLAPW method</topic><topic>Intermetallic compounds</topic><topic>Kondo semiconductor</topic><topic>Physics</topic><topic>Plane-wave methods (including augmented plane-wave method)</topic><topic>Theories and models of many electron systems</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ishii, F.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica. B, Condensed matter</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ishii, F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electronic structures of CeRhAs and CeRhSb</atitle><jtitle>Physica. B, Condensed matter</jtitle><date>2003-04-01</date><risdate>2003</risdate><volume>328</volume><issue>1</issue><spage>154</spage><epage>156</epage><pages>154-156</pages><issn>0921-4526</issn><eissn>1873-2135</eissn><abstract>We have performed first-principles band structure calculations of
ε-TiNiSi type CeRhAs and CeRhSb. Results of the calculations predict that the ground state of CeRhAs is insulating with an indirect band gap of
38
meV
. On the other hand, the ground state of CeRhSb is semimetallic with anisotropic hole and electron pockets. Band structures near the Fermi energy and the origin of the band gap are discussed in detail.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/S0921-4526(02)01834-3</doi><tpages>3</tpages></addata></record> |
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| ispartof | Physica. B, Condensed matter, 2003-04, Vol.328 (1), p.154-156 |
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| language | eng |
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| source | Elsevier ScienceDirect Journals |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron density of states and band structure of crystalline solids Electron states Electronic structure Exact sciences and technology FLAPW method Intermetallic compounds Kondo semiconductor Physics Plane-wave methods (including augmented plane-wave method) Theories and models of many electron systems |
| title | Electronic structures of CeRhAs and CeRhSb |
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