Electronic structures of CeRhAs and CeRhSb

Electronic structures of CeRhAs and CeRhSb

We have performed first-principles band structure calculations of ε-TiNiSi type CeRhAs and CeRhSb. Results of the calculations predict that the ground state of CeRhAs is insulating with an indirect band gap of 38 meV . On the other hand, the ground state of CeRhSb is semimetallic with anisotropic ho...

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Veröffentlicht in:Physica. B, Condensed matter Condensed matter, 2003-04, Vol.328 (1), p.154-156
1. Verfasser: Ishii, F.
Format: Artikel
Sprache:eng
Schlagworte:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron density of states and band structure of crystalline solids
Electron states
Electronic structure
Exact sciences and technology
FLAPW method
Intermetallic compounds
Kondo semiconductor
Physics
Plane-wave methods (including augmented plane-wave method)
Theories and models of many electron systems
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Zusammenfassung:We have performed first-principles band structure calculations of ε-TiNiSi type CeRhAs and CeRhSb. Results of the calculations predict that the ground state of CeRhAs is insulating with an indirect band gap of 38 meV . On the other hand, the ground state of CeRhSb is semimetallic with anisotropic hole and electron pockets. Band structures near the Fermi energy and the origin of the band gap are discussed in detail.
ISSN:0921-4526
1873-2135
DOI:10.1016/S0921-4526(02)01834-3