Computer modeling of ion implanted deuterium release from tungsten

Computer modeling of hydrogen release from tungsten during and after ion implantation was made. The model was based on diffusion equation with hydrogen-defect interaction and desorption from the chemisorption state taken into account. One particular experiment on re-emission during implantation, desorption decay after implantation followed by programmed thermodesorption was thoroughly analyzed. Influence of the model parameters, such as diffusivity, solubility, the rate of defect production, maximum concentration of defects, binding energy, and activation energy for chemisorption was analyzed. The set of the best fit parameters was found that gave a good overall description of all three stages of the experiment.