A comparison of MBE- and MOCVD-grown GaInNAs

We have been able to discount three point defects as the factor limiting GaInNAs material quality by comparing samples grown by two different growth techniques. Samples with vastly different concentrations of hydrogen and carbon have very similar properties in terms of deep levels, mobilities, and m...

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Veröffentlicht in:	Journal of crystal growth 2003-04, Vol.251 (1), p.392-398
Hauptverfasser:	Ptak, A.J., Johnston, S.W., Kurtz, Sarah, Friedman, D.J., Metzger, W.K.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Impurities A1. Point defects A3. Metalorganic chemical vapor deposition A3. Molecular beam epitaxy B1. Nitrides Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Electron states Exact sciences and technology Iii-v semiconductors Impurity and defect levels Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Physics
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Beschreibung
Zusammenfassung:	We have been able to discount three point defects as the factor limiting GaInNAs material quality by comparing samples grown by two different growth techniques. Samples with vastly different concentrations of hydrogen and carbon have very similar properties in terms of deep levels, mobilities, and minority-carrier lifetimes. In addition, growth of hydrogen-free samples and corresponding measurements of vacancies provide strong evidence that gallium vacancies have an effect, but are not a limiting defect.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/S0022-0248(02)02201-7