Binding energy of hydrogenic impurities in quantum well wires of InSb/GaAs

The binding energy of a hydrogen-like impurity in a thin size-quantized wire of the InSb/GaAs semiconductors with Kane's dispersion law has been calculated as a function of the radius of the wire and the location of the impurity with respect to the axis of the wire, using a variational approach...

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Veröffentlicht in:	Physica. B, Condensed matter Condensed matter, 2003-10, Vol.338 (1), p.357-360
Hauptverfasser:	Poghosyan, B.Zh, Demirjian, G.H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Binding energy Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Impurities Physics Quantum wires
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