Binding energy of hydrogenic impurities in quantum well wires of InSb/GaAs

The binding energy of a hydrogen-like impurity in a thin size-quantized wire of the InSb/GaAs semiconductors with Kane's dispersion law has been calculated as a function of the radius of the wire and the location of the impurity with respect to the axis of the wire, using a variational approach. It is shown that when the wire radius is less than the Bohr radius of the impurity, the nonparabolisity of dispersion law of charge carriers leads to a considerable increase of the binding energy.