Cl2-BASED INDUCTIVELY COUPLED PLASMA ETCHING OF InP USING INTERNAL ANTENNA
Authors demonstrated ICP etching of InP using two-turn coil placed in process chamber as an internal antenna. The internal antenna well confines the plasma inside the coil. In addition, ion density in the internal antenna is higher than that in the external antenna at the same input power, and the e...
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Veröffentlicht in: | Jpn.J.Appl.Phys ,Part 1. Vol. 42, no. 11, pp. 6837-6838. 2003 Part 1. Vol. 42, no. 11, pp. 6837-6838. 2003, 2003, Vol.42 (11), p.6837-6838 |
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Sprache: | eng |
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