Cl2-BASED INDUCTIVELY COUPLED PLASMA ETCHING OF InP USING INTERNAL ANTENNA

Authors demonstrated ICP etching of InP using two-turn coil placed in process chamber as an internal antenna. The internal antenna well confines the plasma inside the coil. In addition, ion density in the internal antenna is higher than that in the external antenna at the same input power, and the etching rate with an internal antenna plasma of 100 W is almost the same as that with an external antenna plasma of 300 W. The ICP etching using the internal antenna is an effective technique for high-speed etching and electric power saving. 7 refs.