Temperature Dependence of Optical Properties of h-GaN Films Studied by Reflectivity and Ellipsometry

Spectroscopic ellipsometry (SE) carried out at 300 K together with reflectivity measurements performed from 5 to 300 K are used to determine the temperature dependence of the refractive index of hexagonal GaN films between 360 and 600 nm. The refractive index is well described with a Sellmeier dispe...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2000-01, Vol.39 (1R), p.20-25
Hauptverfasser:	Siozade, Laure, Colard, Stéphane, Mihailovic, Martine, Leymarie, Joël, Vasson, Aimé, Grandjean, Nicolas, Leroux, Mathieu, Massies, Jean
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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