Temperature Dependence of Optical Properties of h-GaN Films Studied by Reflectivity and Ellipsometry
Spectroscopic ellipsometry (SE) carried out at 300 K together with reflectivity measurements performed from 5 to 300 K are used to determine the temperature dependence of the refractive index of hexagonal GaN films between 360 and 600 nm. The refractive index is well described with a Sellmeier dispe...
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Veröffentlicht in: | Japanese Journal of Applied Physics 2000-01, Vol.39 (1R), p.20-25 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Spectroscopic ellipsometry (SE) carried out at 300 K together with reflectivity measurements
performed from 5 to 300 K are used to determine the temperature dependence of the refractive index
of hexagonal GaN films between 360 and 600 nm. The refractive index is well described with a Sellmeier
dispersion law and its variation with temperature is given. Below the band gap, the three excitonic
features (labelled A, B and C) appearing in the reflectivity spectra are analysed within a multi-polariton
model which includes the spatial dispersion. The transition energy, broadening parameter and oscillator
strength are derived. The temperature dependence of A and B broadening parameters is analysed. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.39.20 |