Temperature Dependence of Optical Properties of h-GaN Films Studied by Reflectivity and Ellipsometry

Temperature Dependence of Optical Properties of h-GaN Films Studied by Reflectivity and Ellipsometry

Spectroscopic ellipsometry (SE) carried out at 300 K together with reflectivity measurements performed from 5 to 300 K are used to determine the temperature dependence of the refractive index of hexagonal GaN films between 360 and 600 nm. The refractive index is well described with a Sellmeier dispe...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Japanese Journal of Applied Physics 2000-01, Vol.39 (1R), p.20-25
Hauptverfasser: Siozade, Laure, Colard, Stéphane, Mihailovic, Martine, Leymarie, Joël, Vasson, Aimé, Grandjean, Nicolas, Leroux, Mathieu, Massies, Jean
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 25
container_issue 1R
container_start_page 20
container_title Japanese Journal of Applied Physics
container_volume 39
creator Siozade, Laure
Colard, Stéphane
Mihailovic, Martine
Leymarie, Joël
Vasson, Aimé
Grandjean, Nicolas
Leroux, Mathieu
Massies, Jean
description Spectroscopic ellipsometry (SE) carried out at 300 K together with reflectivity measurements performed from 5 to 300 K are used to determine the temperature dependence of the refractive index of hexagonal GaN films between 360 and 600 nm. The refractive index is well described with a Sellmeier dispersion law and its variation with temperature is given. Below the band gap, the three excitonic features (labelled A, B and C) appearing in the reflectivity spectra are analysed within a multi-polariton model which includes the spatial dispersion. The transition energy, broadening parameter and oscillator strength are derived. The temperature dependence of A and B broadening parameters is analysed.
doi_str_mv 10.1143/JJAP.39.20
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_27786116</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>27786116</sourcerecordid><originalsourceid>FETCH-LOGICAL-c326t-361168a70a79813bda56b41a04f7e21e5a55a733ceba1f982d980b39fc1b58313</originalsourceid><addsrcrecordid>eNotkE1LAzEYhIMoWKsXf0FOHoSteZP9PJbaVkuxRes5ZLPvYiTbXZOssP_eLvU0zPAwA0PIPbAZQCyeNpv5fiaKGWcXZAIizqKYpcklmTDGIYoLzq_JjfffJ5smMUxIdcCmQ6dC75A-Y4fHCo8aaVvTXReMVpbuXXsigkE_pl_RWr3RlbGNpx-hrwxWtBzoO9YWdTC_JgxUHSu6tNZ0vm0wuOGWXNXKerz71yn5XC0Pi5dou1u_LubbSAuehkikAGmuMqayIgdRVipJyxgUi-sMOWCikkRlQmgsFdRFzqsiZ6Uoag1lkgsQU_Jw7u1c-9OjD7IxXqO16oht7yXPsnzcOIGPZ1C71nuHteycaZQbJDA5HinHI6UoJGfiD3vwZh0</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>27786116</pqid></control><display><type>article</type><title>Temperature Dependence of Optical Properties of h-GaN Films Studied by Reflectivity and Ellipsometry</title><source>HEAL-Link subscriptions: Institute of Physics (IOP) Journals</source><source>Institute of Physics Journals</source><creator>Siozade, Laure ; Colard, Stéphane ; Mihailovic, Martine ; Leymarie, Joël ; Vasson, Aimé ; Grandjean, Nicolas ; Leroux, Mathieu ; Massies, Jean</creator><creatorcontrib>Siozade, Laure ; Colard, Stéphane ; Mihailovic, Martine ; Leymarie, Joël ; Vasson, Aimé ; Grandjean, Nicolas ; Leroux, Mathieu ; Massies, Jean</creatorcontrib><description>Spectroscopic ellipsometry (SE) carried out at 300 K together with reflectivity measurements performed from 5 to 300 K are used to determine the temperature dependence of the refractive index of hexagonal GaN films between 360 and 600 nm. The refractive index is well described with a Sellmeier dispersion law and its variation with temperature is given. Below the band gap, the three excitonic features (labelled A, B and C) appearing in the reflectivity spectra are analysed within a multi-polariton model which includes the spatial dispersion. The transition energy, broadening parameter and oscillator strength are derived. The temperature dependence of A and B broadening parameters is analysed.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.39.20</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 2000-01, Vol.39 (1R), p.20-25</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c326t-361168a70a79813bda56b41a04f7e21e5a55a733ceba1f982d980b39fc1b58313</citedby><cites>FETCH-LOGICAL-c326t-361168a70a79813bda56b41a04f7e21e5a55a733ceba1f982d980b39fc1b58313</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Siozade, Laure</creatorcontrib><creatorcontrib>Colard, Stéphane</creatorcontrib><creatorcontrib>Mihailovic, Martine</creatorcontrib><creatorcontrib>Leymarie, Joël</creatorcontrib><creatorcontrib>Vasson, Aimé</creatorcontrib><creatorcontrib>Grandjean, Nicolas</creatorcontrib><creatorcontrib>Leroux, Mathieu</creatorcontrib><creatorcontrib>Massies, Jean</creatorcontrib><title>Temperature Dependence of Optical Properties of h-GaN Films Studied by Reflectivity and Ellipsometry</title><title>Japanese Journal of Applied Physics</title><description>Spectroscopic ellipsometry (SE) carried out at 300 K together with reflectivity measurements performed from 5 to 300 K are used to determine the temperature dependence of the refractive index of hexagonal GaN films between 360 and 600 nm. The refractive index is well described with a Sellmeier dispersion law and its variation with temperature is given. Below the band gap, the three excitonic features (labelled A, B and C) appearing in the reflectivity spectra are analysed within a multi-polariton model which includes the spatial dispersion. The transition energy, broadening parameter and oscillator strength are derived. The temperature dependence of A and B broadening parameters is analysed.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><recordid>eNotkE1LAzEYhIMoWKsXf0FOHoSteZP9PJbaVkuxRes5ZLPvYiTbXZOssP_eLvU0zPAwA0PIPbAZQCyeNpv5fiaKGWcXZAIizqKYpcklmTDGIYoLzq_JjfffJ5smMUxIdcCmQ6dC75A-Y4fHCo8aaVvTXReMVpbuXXsigkE_pl_RWr3RlbGNpx-hrwxWtBzoO9YWdTC_JgxUHSu6tNZ0vm0wuOGWXNXKerz71yn5XC0Pi5dou1u_LubbSAuehkikAGmuMqayIgdRVipJyxgUi-sMOWCikkRlQmgsFdRFzqsiZ6Uoag1lkgsQU_Jw7u1c-9OjD7IxXqO16oht7yXPsnzcOIGPZ1C71nuHteycaZQbJDA5HinHI6UoJGfiD3vwZh0</recordid><startdate>20000101</startdate><enddate>20000101</enddate><creator>Siozade, Laure</creator><creator>Colard, Stéphane</creator><creator>Mihailovic, Martine</creator><creator>Leymarie, Joël</creator><creator>Vasson, Aimé</creator><creator>Grandjean, Nicolas</creator><creator>Leroux, Mathieu</creator><creator>Massies, Jean</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20000101</creationdate><title>Temperature Dependence of Optical Properties of h-GaN Films Studied by Reflectivity and Ellipsometry</title><author>Siozade, Laure ; Colard, Stéphane ; Mihailovic, Martine ; Leymarie, Joël ; Vasson, Aimé ; Grandjean, Nicolas ; Leroux, Mathieu ; Massies, Jean</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c326t-361168a70a79813bda56b41a04f7e21e5a55a733ceba1f982d980b39fc1b58313</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Siozade, Laure</creatorcontrib><creatorcontrib>Colard, Stéphane</creatorcontrib><creatorcontrib>Mihailovic, Martine</creatorcontrib><creatorcontrib>Leymarie, Joël</creatorcontrib><creatorcontrib>Vasson, Aimé</creatorcontrib><creatorcontrib>Grandjean, Nicolas</creatorcontrib><creatorcontrib>Leroux, Mathieu</creatorcontrib><creatorcontrib>Massies, Jean</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Siozade, Laure</au><au>Colard, Stéphane</au><au>Mihailovic, Martine</au><au>Leymarie, Joël</au><au>Vasson, Aimé</au><au>Grandjean, Nicolas</au><au>Leroux, Mathieu</au><au>Massies, Jean</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Temperature Dependence of Optical Properties of h-GaN Films Studied by Reflectivity and Ellipsometry</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2000-01-01</date><risdate>2000</risdate><volume>39</volume><issue>1R</issue><spage>20</spage><epage>25</epage><pages>20-25</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>Spectroscopic ellipsometry (SE) carried out at 300 K together with reflectivity measurements performed from 5 to 300 K are used to determine the temperature dependence of the refractive index of hexagonal GaN films between 360 and 600 nm. The refractive index is well described with a Sellmeier dispersion law and its variation with temperature is given. Below the band gap, the three excitonic features (labelled A, B and C) appearing in the reflectivity spectra are analysed within a multi-polariton model which includes the spatial dispersion. The transition energy, broadening parameter and oscillator strength are derived. The temperature dependence of A and B broadening parameters is analysed.</abstract><doi>10.1143/JJAP.39.20</doi><tpages>6</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0021-4922
ispartof Japanese Journal of Applied Physics, 2000-01, Vol.39 (1R), p.20-25
issn 0021-4922
1347-4065
language eng
recordid cdi_proquest_miscellaneous_27786116
source HEAL-Link subscriptions: Institute of Physics (IOP) Journals; Institute of Physics Journals
title Temperature Dependence of Optical Properties of h-GaN Films Studied by Reflectivity and Ellipsometry
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-04T15%3A26%3A53IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Temperature%20Dependence%20of%20Optical%20Properties%20of%20h-GaN%20Films%20Studied%20by%20Reflectivity%20and%20Ellipsometry&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Siozade,%20Laure&rft.date=2000-01-01&rft.volume=39&rft.issue=1R&rft.spage=20&rft.epage=25&rft.pages=20-25&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.1143/JJAP.39.20&rft_dat=%3Cproquest_cross%3E27786116%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=27786116&rft_id=info:pmid/&rfr_iscdi=true