Temperature dependence of Sb-heterostructure millimetre-wave diodes

Temperature dependence of Sb-heterostructure millimetre-wave diodes

The current against voltage characteristics of Sb-heterostructure zero-bias millimetre-wave diodes were measured from 15 to 81 degree C. No significant variation in the zero-bias junction resistance or curvature coefficient was found. The new diode is the first that provides temperature independent...

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Veröffentlicht in:Electronics letters 2002-01, Vol.38 (2), p.94-95
Hauptverfasser: Schulman, J.N., Holabird, K.S., Chow, D.H., Dunlap, H.L., Thomas, S., Croke, E.T.
Format: Artikel
Sprache:eng
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Zusammenfassung:The current against voltage characteristics of Sb-heterostructure zero-bias millimetre-wave diodes were measured from 15 to 81 degree C. No significant variation in the zero-bias junction resistance or curvature coefficient was found. The new diode is the first that provides temperature independent direct detection capability at and beyond W-band.
ISSN:0013-5194
1350-911X
DOI:10.1049/el:20020070