Atomic force microscopy analysis of buckling phenomena in metallic thin films on substrates

In this letter, we would like to underline the interest of AFM investigations for small blister size (first bulking stage). In this way, we present first results concerning in-plane residual stresses obtained on 200 nm thick Ni and Mo films deposited by ion beam sputtering on polycarbonate and thick silicon substrates respectively. Results are compared to the average in-plane stress deduced in films adherent to a thin silicon substrate (200 mu m) from the curvature of the substrate according to Stoney formula and also, in the case of Mo film, to the average in-grain sterss obtained by x-ray diffraction measurements using sin exp 2 psi method. Substrates: