THEORY OF VALENCE AND CONDUCTION BAND OFFSETS IN Si/Si1-yCy HETEROSTRUCTURES

THEORY OF VALENCE AND CONDUCTION BAND OFFSETS IN Si/Si1-yCy HETEROSTRUCTURES

Authors investigate the suitability of Si1-yCy for n -channel electronic devices by calculating the band offsets of Si 1-yCy layers grown on Si. A reformulated tight binding method with measured spectroscopic term values is employed for calculation of valence band offsets. Calculation of conduction...

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Veröffentlicht in:Japanese Journal of Applied Physics, Part 1 Part 1, 2002-01, Vol.31 (5), p.253-256
Hauptverfasser: Ekpunobi, A J, Animalu A, O E
Format: Artikel
Sprache:eng
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Zusammenfassung:Authors investigate the suitability of Si1-yCy for n -channel electronic devices by calculating the band offsets of Si 1-yCy layers grown on Si. A reformulated tight binding method with measured spectroscopic term values is employed for calculation of valence band offsets. Calculation of conduction band offsets gives 6.8y(eV) in good agreement with MOSC-V measurements of 6.5y (eV). Authors find CBO : VBO to be -7:3 for low C concentrations. 12 refs.
ISSN:0021-4922