Thermally Stable Tungsten Bit-line Process Flow for the Capacitor Over Bit-line-Type Dynamic Random-Access Memory

Thermally Stable Tungsten Bit-line Process Flow for the Capacitor Over Bit-line-Type Dynamic Random-Access Memory

Thermally stable tungsten (W) bit-line process technology has been successfully integrated for capacitor over bit-line (COB)-type dynamic random-access memory (DRAM). Major parameters of the W bit-line process flow are demonstrated to be the Ti thickness, the silicidation temperature and the dopant...

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Veröffentlicht in:JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE REV PAP 2000-06, Vol.39 (6R), p.3344-3348
Hauptverfasser: Lee, Won-Jun, Hong, Jeongeui, Rha, Sa-Kyun
Format: Artikel
Sprache:eng
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Zusammenfassung:Thermally stable tungsten (W) bit-line process technology has been successfully integrated for capacitor over bit-line (COB)-type dynamic random-access memory (DRAM). Major parameters of the W bit-line process flow are demonstrated to be the Ti thickness, the silicidation temperature and the dopant concentration. The minimum contact resistance (
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.39.3344