Temperature and RE elemental dependence for ZrO2–RE2O3 oxide film growth by IBAD method

Biaxially aligned growth was studied by dual-ion-beam sputtering method for ZrO2-RE2O3 oxide films on polycrystalline Ni-based alloy substrates. Cube-textured (all axes aligned with a 100 axis substrate normal) films were obtained by low energy (200 eV) Ar+ ion bombardment. The optimized growth temp...

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Veröffentlicht in:Physica. C, Superconductivity Superconductivity, 2002-10, Vol.378-381, p.960-964
Hauptverfasser: Iijima, Yasuhirio, Kakimoto, Kazuomi, Saitoh, Takashi, Kato, Takeharu, Hirayama, Tsukasa
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Sprache:eng
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Zusammenfassung:Biaxially aligned growth was studied by dual-ion-beam sputtering method for ZrO2-RE2O3 oxide films on polycrystalline Ni-based alloy substrates. Cube-textured (all axes aligned with a 100 axis substrate normal) films were obtained by low energy (200 eV) Ar+ ion bombardment. The optimized growth temperature increased with the richer combined ratio for RE2O3. Several pyrochlore type oxides (RE2Zr2O7) have sharp textures at the optimized temperatures of 200 C. The most sharply textured films were obtained for Gd2Zr2O7 and Eu2Zr2O7. The time constant of texture evolution was about half compared to YSZ. The texture sharpness degrades with the ion radius of rare-earth elements being apart from the ones for Gd, Eu. 13 refs.
ISSN:0921-4534
DOI:10.1016/S0921-4534(02)01577-0