The Interface of Sputter-Deposited TiNi Thin Film on (100) Si Wafer

The sputter-deposited TiNi thin films on (001) Si wafer were annealed at 400 to 800 C for 30 min, and their interfaces were studied by using TEM, AES, and XRD analysis. For annealing temperature below 600 C, Ni atoms are the main diffusing species of the film-substrate interface reaction, and NiSi2...

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Veröffentlicht in:	Materials science forum 2000-01, Vol.327-328, p.127-130
Hauptverfasser:	Wu, I.J., Lin, Hsiung Cheng, Wu, Shi Kang, Wang, J.Y.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Cross-disciplinary physics: materials science rheology Deposition by sputtering Exact sciences and technology Materials science Metals. Metallurgy Methods of deposition of films and coatings film growth and epitaxy Physics
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